دیتاشیت KHB9D5N20F-VB
مشخصات دیتاشیت
| نام دیتاشیت |
KHB9D5N20F-VB
|
| حجم فایل |
68.385
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
VBsemi Elec KHB9D5N20F-VB
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
37W
-
Total Gate Charge (Qg@Vgs):
16nC@10V
-
Drain Source Voltage (Vdss):
200V
-
Input Capacitance (Ciss@Vds):
560pF@25V
-
Continuous Drain Current (Id):
10A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
110pF@25V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
265mΩ@10V,4.3A
-
Package:
TO-220F-3
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Manufacturer:
VBsemi Elec
